Revealing the band structure of InSb nanowires by high-field magnetotransport in the quasiballistic regime
نویسندگان
چکیده
Florian Vigneau,1 Önder Gül,2 Yann-Michel Niquet,3,4 Diana Car,5 Sebastien R. Plissard,6 Walter Escoffier,1 Erik P. A. M. Bakkers,5 Ivan Duchemin,3,4 Bertrand Raquet,1 and Michel Goiran1 1LNCMI-EMFL, INSA,UPS, UGA, CNRS-UPR3228, 143 Avenue de Rangueil, 31400 Toulouse, France 2QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands 3Université Grenoble Alpes, INAC-MEM, L_Sim, Grenoble, 38000 Grenoble, France 4CEA, INAC-MEM, L_Sim, 17 Rue des Martyrs, 38054 Grenoble, France 5Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands 6LAAS-CNRS, Université de Toulouse, CNRS, Toulouse, France (Received 5 July 2016; revised manuscript received 17 October 2016; published 5 December 2016)
منابع مشابه
Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.
We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and th...
متن کاملSynthesis of Serrated GaN Nanowires for Hydrogen Gas Sensors Applications by Plasma-Assisted Vapor Phase Deposition Method
Nowadays, the semiconductor nanowires (NWs) typically used in hydrogen gas sensors. Gallium nitride (GaN) with a wide band gap of 3.4 eV, is one of the best semiconductors for this function. NWs surface roughness have important role in gas sensors performance. In this research, GaN NWs have been synthesized on Si substrate by plasma-assisted vapor phase deposition at different deposition time, ...
متن کاملImpressive Reduction of Dark Current in InSb Infrared Photodetector to achieve High Temperature Performance
Infrared photo detectors have vast and promising applications in military,industrial and other fields. In this paper, we present a method for improving theperformance of an infrared photodetector based on an InSb substance. To achieve goodperformance at high temperatures, thermal noise and intrusive currents should bereduced. For this purpose, a five-layer hetero structu...
متن کاملRoom temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics
Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current-voltage curve, based on the metal-semiconductor-meta...
متن کاملMagnetotransport in Co-doped ZnO nanowires.
Electrical and magnetotransport measurements were performed on individual Co-doped ZnO dilute magnetic semiconductor nanowires. The electron transport studies show that the electron mobility could be as high as 75 cm(2)/(V.s), and we observed positive magnetoresistivity (MR) at low magnetic field and negative MR at higher magnetic field. s-d exchange-induced spin splitting of the conduction ban...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2016